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參數(shù)資料
| 型號： | 934033680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.65 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC, MSA474, 2 PIN |
| 文件頁數(shù)： | 19/22頁 |
| 文件大小： | 140K |
| 代理商： | 934033680115 |
1997 Nov 25
6
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYG80 series
BYG80F and G
Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.6
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
(1)
(2)
200
100
Tamb (οC)
2
1.5
IF(AV)
(A)
0.5
0
1
MGL080
BYG80J
Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.7
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.4
0.8
1.2
1.6
40
(1)
(2)
IF(AV)
(A)
80
120
Tamb (oC)
160
MGL092
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
handbook, full pagewidth
30
0
10
IFRM
(A)
20
MGL086
102
101
110
tP (ms)
102
103
104
δ = 0.05
1
0.1
0.2
0.5
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