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參數資料
| 型號： | 934033680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.65 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC, MSA474, 2 PIN |
| 文件頁數： | 16/22頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 934033680115 |
1997 Nov 25
3
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYG80 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IF(AV)
average forward current
Tamb =60 °C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
0.95
A
BYG80F; BYG80G
0.85
A
BYG80J
0.65
A
IFRM
repetitive peak forward current
Ttp = 100 °C; see Figs 8, 9 and 10
BYG80A to D
21
A
BYG80F; BYG80G
21
A
BYG80J
18
A
IFRM
repetitive peak forward current
Tamb =60 °C; AL2O3 PCB mounting;
see Figs 11, 12 and 13
BYG80A to D
11
A
BYG80F; BYG80G
11
A
BYG80J
9A
IFRM
repetitive peak forward current
Tamb =60 °C; epoxy PCB mounting;
see Figs 14, 15 and 16
BYG80A to D
8A
BYG80F; BYG80G
8A
BYG80J
6A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave; Tj =25 °C
prior to surge; VR =VRRMmax
BYG80A to D
36
A
BYG80F; BYG80G; BYG80J
32
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.20
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 21, 22 and 23
BYG80A to D
0.67
V
BYG80F; BYG80G
0.73
V
BYG80J
0.96
V
VF
forward voltage
IF = 1 A; see Figs 21, 22 and 23
BYG80A to D
0.93
V
BYG80F; BYG80G
0.98
V
BYG80J
1.20
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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