參數(shù)資料
型號(hào): 934033680115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.65 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC, MSA474, 2 PIN
文件頁(yè)數(shù): 12/22頁(yè)
文件大?。?/td> 140K
代理商: 934033680115
1997 Nov 25
2
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYG80 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG80A
50
V
BYG80B
100
V
BYG80C
150
V
BYG80D
200
V
BYG80F
300
V
BYG80G
400
V
BYG80J
600
V
VR
continuous reverse voltage
BYG80A
50
V
BYG80B
100
V
BYG80C
150
V
BYG80D
200
V
BYG80F
300
V
BYG80G
400
V
BYG80J
600
V
IF(AV)
average forward current
Ttp = 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
2.4
A
BYG80F; BYG80G
2.3
A
BYG80J
2.0
A
IF(AV)
average forward current
Tamb =60 °C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
1.25
A
BYG80F; BYG80G
1.15
A
BYG80J
0.95
A
相關(guān)PDF資料
PDF描述
934033680135 0.65 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
934033670135 0.85 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
934033620115 0.95 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
934033620135 0.95 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
934033630135 0.95 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
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