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參數(shù)資料
| 型號： | 933997320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 933997320112 |
1998 Jan 21
2
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF544
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability
Designed for broadband operation.
APPLICATIONS
Communication transmitters in the UHF frequency
range.
DESCRIPTION
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (VGS)
information is provided for matched pair applications.
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
g
gate
4
d
drain
5
s
source
6
s
source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM390
1
2
3
4
5
6
Top view
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
20
>11
>50
CW, class-B
960
28
20
typ. 7
typ. 50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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