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參數(shù)資料
| 型號： | 933997320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 117K |
| 代理商： | 933997320112 |
1998 Jan 21
4
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF544
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
1mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
VGSth
gate-source threshold voltage
ID = 40 mA; VDS =10V
1
4V
V
GSth
gate-source voltage difference of
matched pairs
ID = 40 mA; VDS =10V
100
mV
gfs
forward transconductance
ID = 1.2 A; VDS = 10 V
600
900
mS
RDSon
drain-source on-state resistance
ID = 1.2 A; VGS =10V
0.85
1.25
IDSX
on-state drain current
VGS = 15 V; VDS =10V
4.8
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
32
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
24
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
6.4
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
VDS =10V.
handbook, halfpage
4
0
2
MDA504
ID (A)
T.C
(mV/K)
110
102
101
Fig.5
Drain current as a function of gate-source
voltage; typical values.
VDS =10V;Tj =25 °C.
handbook, halfpage
0
6
4
2
0
5
VGS (V)
ID
(A)
10
20
15
MDA505
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