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參數(shù)資料
| 型號： | 933997320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 117K |
| 代理商： | 933997320112 |
1998 Jan 21
3
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF544
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±20
V
ID
drain current (DC)
3.5
A
Ptot
total power dissipation
Tmb ≤ 25 °C
48
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
3.7
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.4
K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25 °C.
handbook, halfpage
101
1
10
110
102
(1)
ID
(A)
VDS (V)
MRA992
(2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
(1)
(2)
40
80
Ptot
(W)
160
60
20
0
40
120
MBK442
Th ( °C)
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