參數(shù)資料
型號(hào): 933994040114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC PACKAGE-2
文件頁數(shù): 7/12頁
文件大?。?/td> 90K
代理商: 933994040114
1997 Feb 18
4
Philips Semiconductors
Product specication
NPN microwave power transistor
MZ0912B50Y
THERMAL CHARACTERISTICS
Tj = 125 °C unless otherwise specied.
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp =10 s; δ = 10%.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C measured in the test jig as shown in Fig.3 and working in class C broadband
mode in pulse; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
List of components (see Fig.3).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
CW
4.9
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
CW; note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
notes 1 and 2
0.85
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
VCB =65V; IE = 0
20
mA
VCB =50V; IE =0
2
mA
ICES
collector cut-off current
VCE =60V; RBE =0
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
200
A
MODE OF OPERATION
f
(GHz)
VCC
(V)(2)
PL
(W)
Gp
(dB)
ηC
(%)
Zi/ZL
(
)
Class C;
tp =10 s; δ = 10%
0.960 to 1.215
50
>50
typ. 60
>7
typ. 8
>42
typ. 44
see Figs 6
and 7
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
0.65 mm diameter copper wire
total length = 12 mm;
height of loop = 9 mm
L3
4 turns 0.65 mm diameter
copper wire;
int. dia. 3 mm; l = 5 mm
C1
capacitor
100 pF
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10
F; 50 V
C3
electrolytic capacitor
470
F; 63 V
C4
feedthrough bypass capacitor
Erie, ref. 1250-003
C5, C6
variable gigatrim capacitor
0.6 to 4.5 pF
Tekelec, ref. 727.1
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