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參數(shù)資料
| 型號： | 933994040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 933994040114 |
1997 Feb 18
2
Philips Semiconductors
Product specication
NPN microwave power transistor
MZ0912B50Y
FEATURES
Interdigitated structure provides
high emitter efficiency
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Input and output matching cell
allows an easier design of circuits.
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common base class C
broadband amplier.
PINNING - SOT443A
MODE OF
OPERATION
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi/ZL ()
Class C;
tp =10 s; δ =1%
0.960 to 1.215 50
>50
>7
>42
see Figs 6
and 7
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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