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參數(shù)資料
| 型號(hào)： | 933994040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 933994040114 |
1997 Feb 18
3
Philips Semiconductors
Product specication
NPN microwave power transistor
MZ0912B50Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCEO
collector-emitter voltage
open base
20
V
VCES
collector-emitter voltage
RBE =0
60
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
tp ≤ 10 s; δ≤ 10%
3A
Ptot
total power dissipation (peak power)
Tmb =75 °C; tp ≤ 10 s; δ≤ 10%
150
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2 Power derating curve.
tp =10 s; δ = 10%; Ptot max = 150 W.
handbook, halfpage
50
200
180
0
60
120
0
Ptot
(W)
100
Tmb (°C)
MGL051
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