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| 型號： | 933978490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 933978490112 |
1998 Jul 29
2
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF368
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A1
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ndbook, halfpage
12
34
MSB008
Top view
55
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at Th =25 °C in a push-pull common source test circuit.
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
Gp
(dB)
(note 1)
ηD
(%)
CW, class-AB
225
32
300
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
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