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參數(shù)資料
| 型號： | 933978490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 933978490112 |
1998 Jul 29
3
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specied
VDSS
drain-source voltage
65
V
VGSS
gate-source voltage
±20
V
ID
drain current (DC)
25
A
Ptot
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded
500
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
Rth mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
0.15
K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25 °C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
102
110
VDS (V)
ID
(A)
102
(1)
MRA933
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
40
80
160
500
0
400
MGE616
120
300
200
100
Ptot
(W)
Th (°C)
(2)
(1)
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