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參數(shù)資料
| 型號(hào)： | 933978490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | 933978490112 |
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1998 Jul 29
7
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF368
Fig.9
Power gain as a function of load power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;
ZL = 1.34 + j0.34 (per section); RGS = 536 (per section);
f = 225 MHz.
solid line: Th =25 °C. dotted line: Th =70 °C.
handbook, halfpage
0
500
20
16
8
4
12
100
200
300
400
MGP239
Gp
(dB)
PL (W)
Fig.10 Efficiency as a function of load power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;
ZL = 1.34 + j0.34 (per section); RGS = 536 (per section);
f = 225 MHz.
solid line: Th =25 °C. dotted line: Th =70 °C.
handbook, halfpage
0
100
500
80
60
20
0
40
200
300
400
MGP241
ηD
(%)
PL (W)
Fig.11 Load power as a function of input power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;
ZL = 1.34 + j0.34 (per section); RGS = 536 (per section);
f = 225 MHz.
solid line: Th =25 °C. dotted line: Th =70 °C.
handbook, halfpage
010
20
30
500
0
400
300
200
100
MGP240
PL
(W)
PIN (W)
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