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參數(shù)資料
| 型號(hào)： | 933930010112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | 933930010112 |
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September 1992
2
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF177
FEATURES
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
PINNING - SOT121
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
andbook, halfpage
MLA876
14
3
2
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
SSB class-AB
28
50
150 (PEP)
> 20
> 35
<30
CW class-B
108
50
150
typ. 19
typ. 70
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