參數(shù)資料
型號: 933930010112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 13/16頁
文件大小: 121K
代理商: 933930010112
September 1992
6
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF177
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 unless otherwise specied.
RF performance in SSB operation in a common source class-AB circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
GP
(dB)
ηD
(%)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
SSB, class-AB
28
50
0.7
20 to 150
(PEP)
> 20
typ. 35
> 35
typ. 40
<30
typ.
35
<30
typ.
38
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 50 V; f = 28 MHz at rated output power.
Fig.9
Power gain as a function of load power,
typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
30
20
10
0
100
200
MGP096
Gp
(dB)
PL (W) PEP
Fig.10 Two tone efficiency as a function of load
power, typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
60
40
20
0
100
200
MGP094
ηD
(%)
PL (W) PEP
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