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| 型號(hào)： | 933930010112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | 933930010112 |
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September 1992
3
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF177
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
110
V
±VGS
gate-source voltage
20
V
ID
DC drain current
16
A
Ptot
total power dissipation
up to Tmb = 25 °C
220
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-mb
thermal resistance from junction to mounting base
max. 0.8 K/W
Rth mb-h
thermal resistance from mounting base to heatsink
max. 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
handbook, halfpage
102
10
1
101
MRA906
110
VDS (V)
ID
(A)
102
103
(1)
(2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
300
200
100
0
50
(2)
(1)
100
150
MGP089
Ptot
(W)
Th (°C)
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