參數(shù)資料
型號(hào): 933582620112
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC PACKAGE-8
文件頁(yè)數(shù): 5/24頁(yè)
文件大小: 152K
代理商: 933582620112
1998 Feb 09
13
Philips Semiconductors
Product specication
UHF linear push-pull power transistor
BLV57
Conditions for Figs 11and 12:
Typical values; VCE = 25 V; IC =2 × 0,85 A; Th =25 °C; Th =70 °C; fvision = 860 MHz.
Ruggedness in push-pull class-A operation
The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following
conditions:
Notes
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
≤70 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0
dB to
20 dB.
VCE = 25 V; IC =2 × 0,85 A; Th =70 °C; Po sync(1) ≤ 12,5 W; f = 860 MHz; Rth mb-h = 0,25 K/W.
At any other composition of the output signal: PL (r.m.s. value) ≤ 5 W.
Fig.13 Input impedance (series components).
handbook, halfpage
400
650
900
6
2
0
4
MGP369
f (MHz)
xi
ri
ri, xi
(
)
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