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參數(shù)資料
| 型號： | 933582620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-8 |
| 文件頁數(shù)： | 21/24頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 933582620112 |
1998 Feb 09
6
Philips Semiconductors
Product specication
UHF linear push-pull power transistor
BLV57
CHARACTERISTICS apply to either transistor section unless otherwise specied
Tj =25°C
Notes
1. Measured under pulse conditions: tp ≤ 300 s; δ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 s; δ≤ 0,01.
The graphs apply to either transistor section.
Collector-emitter breakdown voltage
VBE = 0; IC = 10 mA
V(BR)CES
50 V
open base; IC = 25 mA
V(BR)CEO
27 V
Emitter-base breakdown voltage
open collector; IE = 5 mA
V(BR)EBO
3,5 V
Collector cut-off current
VBE = 0; VCE = 27 V
ICES
10 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
ESBO
2mJ
RBE =10
ESBR
2mJ
D.C. current gain(1)
typ.
15
40
IC = 0,85 A; VCE = 25 V
hFE
D.C. current gain ratio of transistor sections
IC = 0,85 A; VCE = 25 V
0,67 to 1,5
Collector-emitter saturation voltage(1)
IC = 1,7 A; IB = 0,17 A
VCEsat
typ.
0,75 V
Transition frequency at f = 100 MHz(2)
IE = 0,85 A; VCB = 25 V
fT
typ.
2,5 GHz
I
E = 1,7 A; VCB = 25 V
fT
typ.
2,5 GHz
Collector capacitance at f = 1 MHz
typ.
24
30
pF
IE =Ie = 0; VCB = 25 V
Cc
Feedback capacitance at f = 1 MHz
IC = 50 mA; VCE = 25 V
Cre
typ.
15 pF
Collector-ange capacitance
Ccf
typ.
2 pF
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