
1998 Feb 09
2
Philips Semiconductors
Product specication
UHF linear push-pull power transistor
BLV57
FEATURES
internally matched input for wideband operation and
high power gain
internal midpoint (r.f. ground) reduces negative
feedback and improves power gain
increased input and output impedances (compared with
single-ended transistors) simplify wideband matching
length of the external emitter leads is not critical
diffused emitter ballasting resistors for an optimum
temperature profile
gold metallization ensures excellent reliability.
DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one
package to be used as push-pull amplifier, primarily
intended for use in linear u.h.f. television transmitters and
transposers.
The package is an 8-lead flange type with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT161A
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
e
emitter
3
c2
collector 2
4
b2
base 2
5
c1
collector 1
6
b1
base 1
7
e
emitter
8
e
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MBC826
1
3
5
78
6
4
2
Top view
QUICK REFERENCE DATA
R.F. performance in linear amplier
Notes
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
2. Power gain compression is 1 dB.
MODE OF
OPERATION
fvision
MHz
VCE
V
IC1 =IC2
A
IC(ZS)
A
Th
°C
dim(1)
dB
Po sync(1)
W
PL
W
Gp
dB
class-A
860
25
0,85
70
25
60
55
typ.
6
12
typ.
8,0
9,0
class-AB
860
25
1,25
2
× 0,1
25
typ. 38(2)
typ.
6,5(2)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.