參數(shù)資料
型號(hào)： 7P032FLF1200C20
英文描述： Peripheral Miscellaneous
中文描述： 周邊雜項(xiàng)
文件頁(yè)數(shù)： 3/17頁(yè)
文件大?。?/td> 202K
代理商： 7P032FLF1200C20
November 2000 Rev. 3 - ECO #13392
11
PCMCIA Flash Memory Card
FLF10 Series
PC Card Products
SYM
Parameter
Notes
Min
Typ
(1)
Max
Units Test Conditions
tWHQV1
Word/Byte Program time
2,4
6.3
s
Effective time per Byte
(using Write Buffer)
tWHQV3
Byte Program Time (using
Byte program command)
180
s
Block Program Time (using
write to buffer command)
2
0.8
sec
Word Program Mode
tWHQV4
Block Erase Time
2
0.7
sec
tWHRH
Erase Suspend Latency
Time to Read
26
35
s
Notes:
1. Typical: Nominal voltages and T
A = 25C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
VCC = 5V ± 5%, T
A = 0C to + 70C
SYMBOL
Parameter
Min
Max
Unit
tw(RST)
Reset pulse High time
35
s
P2
RST Low to reset during
Erase/Program/Lock-bit
100
ns
trec(RST)
Reset Low to output delay
500
ns
trec(WEL)
Reset Recovery to WE going Low
1
s
tWHRL
WE High to Rdy/Bsy going low
100
ns
tw(RST)
P2
RDY/BSY
RST
Valid Output
trec(RST)
trec(WEL)
WE#
Read Operation
Write Operation
tWHRL
tWHQV
tWHRH
Data Write and Erase Performance (1,3)
Waveforms for Reset Operation
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