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| 型號(hào)： | 7P032FLF1200C20 |
| 英文描述： | Peripheral Miscellaneous |
| 中文描述： | 周邊雜項(xiàng) |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 202K |
| 代理商： | 7P032FLF1200C20 |
November 2000 Rev. 3 - ECO #13392
7
PCMCIA Flash Memory Card
FLF10 Series
PC Card Products
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Storage Temperature
-10°C to +70 °C
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Note:
Stress
greater
than
those
listed
under
“Absolute
Maximum
ratings”
may
cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute
maximum
rating
conditions
for
extended periods may affect reliability.
Symbol
Parameter
Density
(Mbytes)
Notes Typ
(3)
Max
Units
Test Conditions
ICCR
VCC Read Current
32,64,96,128,
160,192
70
110
mA
VCC = VCCmax
tcycle = 200ns
ICCW
VCC Program
Current
32,64,96,128,
160, 192
70
120
mA
2 memory devices
ICCE
VCC Erase Current
32,64,96,128,
160,192
70
140
mA
2 memory devices
32
100
200
64
200
400
96
300
600
128
400
800
160
500
1000
ICCD
VCC Power-down
Current
192
2
600
1200
A
VCC = VCCmax
Control Signals = VCC
Reset = VCC (active)
32
0.1
0.2
64
0.2
0.4
96
0.3
0.6
128
0.4
0.8
160
0.5
1.0
ICCS
(CMOS)
VCC Standby
Current
192
2
0.6
1.2
mA
VCC = VCCmax
Control Signals = VCC
Reset = 0V (not active)
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide
operations (2 memory devices activated).
2. Control Signals: CE
1#, CE2#, OE#, WE#.
3. Typical: VCC = 5V or VCC = 3V, T = +25°C.
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
VCC
Tolerance
3.3V
± 0.3V
5.0V
± 0.5V
Note: The FLF10 Series Card will
function at either 3.3V or 5.0V
Absolute Maximum Ratings (2)
Recommended Supply Voltage
DC Characteristics (1)
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