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參數(shù)資料
| 型號(hào)： | 75V16F64GS16 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP) |
| 中文描述： | 64兆位閃存和16兆位偽靜態(tài)存儲(chǔ)器堆疊式多芯片封裝（MCP）技術(shù) |
| 文件頁數(shù)： | 48/50頁 |
| 文件大?。?/td> | 255K |
| 代理商： | 75V16F64GS16 |
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48
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
PSRAM DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Conditions
V
IN
=
0 V
V
OUT
=
0 V
V
IN
=
0 V
V
IN
=
0 V
Min.
Max.
Unit
C
IN
Input Capacitance
11
14
pF
C
OUT
Output Capacitance
12
16
pF
C
IN
2
Control Pin Capacitance
14
16
pF
C
IN
3
WP
/ACC Pin Capacitance
21.5
26
pF
Notes:
1. Test conditions T
A
= +25
°C
, f = 1.0 MHz
I
SB
2r VS V
IN
Cycle Time
HANDLING OF PACKAGE:
Please handle this package carefully since the sides of package created with acute angles.
CAUTION:
1) The high voltage (VID) cannot be applied to address pins and control pins except RESET. Exception is when
autoselect and sector group protection function are used. Then the high voltage (VID) can be applied to RESET.
2) Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
2.5
2.0
1.5
1.0
0.5
0.0
0
200
400
V
IN
Cycle Time
(ns)
600
800
1000
I
SB2
r vs. V
IN
Cycle Time (V
CC
r = 3.0 V)
I
S
r
: RT = 25 °C
: LT = -30 °C
: HT = 85 °C
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