參數(shù)資料
型號: 75V16F64GS16
廠商: Integrated Silicon Solution, Inc.
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: 64兆位閃存和16兆位偽靜態(tài)存儲器堆疊式多芯片封裝(MCP)技術(shù)
文件頁數(shù): 38/50頁
文件大?。?/td> 255K
代理商: 75V16F64GS16
38
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
PSRAM READ TIMING
(
OE
Control Access)
PSRAM READ TIMING
(
CE
1r Control Access)
Address
Valid Data Input
CE
1r
OE
DQ
(Input)
Address Valid
tRC
tCLOL
tCE
tRC
tOHAH
tOE
Valid Data Input
tOE
tOP
tOLCH
tOH
tOHZ
tOLZ
tOHZ
tOH
tOLZ
tASO
tOHAH
tASO
Address Valid
Address
Valid Data Input
CE
1r
OE
DQ
(Input)
Address Valid
tRC
tCE
tRC
tcHAH
Valid Data Input
tOH
tCHZ
tCLZ
tCHZ
tOH
tCLZ
tOHAH
tASC
Address Valid
tCE
tASC
tCP
Note: CE2r and
WE
must be High during read cycle.
Note: CE2r and
WE
must be High during read cycle.
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