參數(shù)資料
型號: 74F648A
廠商: NXP Semiconductors N.V.
英文描述: Octal transceiver/register, non-inverting(3-State)(八通道收發(fā)器/寄存器,同向(三態(tài)))
中文描述: 八路收發(fā)器/寄存器,非反相(3態(tài))(八通道收發(fā)器/寄存器,同向(三態(tài)))
文件頁數(shù): 7/16頁
文件大小: 121K
代理商: 74F648A
Philips Semiconductors
Product specification
74F646/A/74F648/A
Transceivers/registers
1990 Sep 25
7
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST
LIMITS
TYP
2
UNIT
CONDITIONS
1
MIN
MAX
V
CC
= MIN,
I
OH
= –3mA
±
10%V
CC
2.4
V
V
OH
High-level output voltage
V
IL
= MAX,
±
5%V
CC
2.7
3.4
V
V
IH
= MIN
I
=
–15mA
±
10%V
CC
2.0
V
V
OL
Low-level output voltage
All
V
CC
= MIN,
V
IL
= MAX,
V
IH
= MIN
V
CC
= MIN, I
I
= I
IK
V
CC
= 0.0V, V
I
= 7.0V
V
CC
= MAX, V
I
= 5.5V
V
CC
= MAX, V
I
= 2.7V
V
CC
= MAX, V
I
= 0.5V
I
OL
= 48mA
±
10%V
CC
0.38
0.55
V
74F646/74F648 only
I
OL
= 64mA
±
5%V
CC
0.42
0.55
V
V
IK
I
I
Input clamp voltage
Input current at
maximum input voltage
High–level input current
Low–level input current
–0.73
-1.2
100
1
20
–20
V
μ
A
mA
μ
A
μ
A
others
A0–A7, B0–B7
OE, DIR, CPAB,
CPBA, SAB, SBA
I
IH
I
IL
I
OZH
+ I
IH
Off–state output current,
high–level voltage applied
A0 – A7, B0 –B7
V
CC
= MAX, V
O
= 2.7V
70
μ
A
I
OZL
+ I
IL
Off–state output current,
low–level voltage applied
V
CC
= MAX, V
O
= 0.5V
–70
μ
A
I
OS
I
O
Short–circuit output current
3
Output current
4
74F646, 74F648
V
CC
= MAX
V
CC
= MAX, V
0
= 2.25V
-100
-225
mA
74F646A, 74F648A
-60
-150
mA
74F646,
I
CCH
I
CCL
I
CCZ
I
CCH
I
CCL
I
CCZ
125
165
mA
74F648
V
CC
= MAX
160
210
mA
I
CC
Supply current (total)
135
160
mA
74F646A,
100
145
mA
74F648A
V
CC
= MAX
110
155
mA
105
155
mA
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
Unless otherwise specified, V
X
= V
CC
for all test conditions.
2. All typical values are at V
CC
= 5V, T
amb
= 25
°
C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
4. I
O
is tested under conditions that produce current approximately one half of the true short–circuit output current (I
OS
).
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