參數(shù)資料
型號: 71V35761YSA183BGI8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 128K X 36 CACHE SRAM, 3.3 ns, PBGA119
封裝: BGA-119
文件頁數(shù): 2/22頁
文件大?。?/td> 621K
代理商: 71V35761YSA183BGI8
6.42
10
IDT71V35761Y (128K x 36), IDT71V35781Y (256K x 18), 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Synchronous Truth Table(1,3)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
OE is an asynchronous input.
3. ZZ = low for this table.
Operation
Address
Used
CE
CS0
CS1
ADSP
ADSC
ADV
GW
BWE
BWx
OE
(2)
CLK
I/O
Deselected Cycle, Power Down
None
H
X
L
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
H
L
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
L
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
H
X
L
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
L
X
-
HI-Z
Read Cycle, Begin Burst
External
L
H
L
X
L
-
DOUT
Read Cycle, Begin Burst
External
L
H
L
X
H
-
HI-Z
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
X
L
-
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
L
-
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
-
HI-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
X
-
DIN
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
-
DIN
Read Cycle, Continue Burst
Next
X
H
L
H
X
L
-
DOUT
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
-
HI-Z
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
L
-
DOUT
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
-
HI-Z
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
L
-
DOUT
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
-
HI-Z
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
L
-
DOUT
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
-
HI-Z
Write Cycle, Continue Burst
Next
X
H
L
H
L
X
-
DIN
Write Cycle, Continue Burst
Next
X
H
L
X
-
DIN
Write Cycle, Continue Burst
Next
H
X
H
L
H
L
X
-
DIN
Write Cycle, Continue Burst
Next
H
X
H
L
X
-
DIN
Read Cycle, Suspend Burst
Current
X
H
X
L
-
DOUT
Read Cycle, Suspend Burst
Current
X
H
X
H
-
HI-Z
Read Cycle, Suspend Burst
Current
X
H
X
H
L
-
DOUT
Read Cycle, Suspend Burst
Current
X
H
X
H
-
HI-Z
Read Cycle, Suspend Burst
Current
H
X
H
X
L
-
DOUT
Read Cycle, Suspend Burst
Current
H
X
H
X
H
-
HI-Z
Read Cycle, Suspend Burst
Current
H
X
H
X
H
L
-
DOUT
Read Cycle, Suspend Burst
Current
H
X
H
X
H
-
HI-Z
Write Cycle, Suspend Burst
Current
X
H
L
X
-
DIN
Write Cycle, Suspend Burst
Current
X
H
L
X
-
DIN
Write Cycle, Suspend Burst
Current
H
X
H
L
X
-
DIN
Write Cycle, Suspend Burst
Current
H
X
H
L
X
-
DIN
6445 tbl 11
相關PDF資料
PDF描述
71V35781S183PF 256K X 18 CACHE SRAM, 3.3 ns, PQFP100
7201LA20JGI 512 X 9 OTHER FIFO, 20 ns, PQCC32
72031-111LF 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
72031-111 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
72031-113LF 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
相關代理商/技術參數(shù)
參數(shù)描述
71V3576S133BGI 制造商:Integrated Device Technology Inc 功能描述:
71V3576S133PFG 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V3576S133PFG8 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V3576S133PFGI 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V3576S133PFGI8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 4.2NS 100TQFP - Tape and Reel