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參數(shù)資料
| 型號： | 7134SA35PB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 4K X 8 DUAL-PORT SRAM, 35 ns, PDIP48 |
| 封裝： | PLASTIC, DIP-48 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 7134SA35PB |
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
6
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. 'X' in part number indicates power rating (SA or LA).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(3)
7134X20
Com'l Only
7134X25
Com'l, Ind
& Military
7134X35
Com'l, Ind
& Military
Unit
Symbol
Parameter
Min.
Max.Min.Max.Min.
Max.
READ CYCLE
tRC
Read Cycle Time
20
____
25
____
35
____
ns
tAA
Address Access Time
____
20
____
25
____
35
ns
tACE
Chip Enable Access Time
____
20
____
25
____
35
ns
tAOE
Output Enable Access Time
____
15
____
15
____
20
ns
tOH
Output Hold from Address Change
0
____
0
____
0
____
ns
tLZ
Output Low-Z Time
(1,2)
0
____
0
____
0
____
ns
tHZ
Output High-Z Time
(1,2)
____
15
____
15
____
20
ns
tPU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
tPD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
ns
2720 tbl 09a
7134X45
Com'l &
Military
7134X55
Com'l, Ind
& Military
7134X70
Com'l &
Military
Unit
Symbol
Parameter
Min.Max.Min.Max.Min.Max.
READ CYCLE
tRC
Read Cycle Time
45
____
55
____
70
____
ns
tAA
Address Access Time
____
45
____
55
____
70
ns
tACE
Chip Enable Access Time
____
45
____
55
____
70
ns
tAOE
Output Enable Access Time
____
25
____
30
____
40
ns
tOH
Output Hold from Address Change
0
____
0
____
0
____
ns
tLZ
Output Low-Z Time
(1,2)
5
____
5
____
5
____
ns
tHZ
Output High-Z Time
(1,2)
____
20
____
25
____
30
ns
tPU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
tPD
Chip Disable to Power Down Time
(2)
____
45
____
50
____
50
ns
2720 tbl 09b
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