參數(shù)資料
型號： 70V25L25PFGI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
封裝： 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100
文件頁數(shù)： 23/25頁
文件大?。?/td> 211K
代理商： 70V25L25PFGI
6.42
7
IDT70V35/34S/L (IDT70V25/24S/L)
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings(1)
Maximum Operating Temperature
and Supply Voltage(1)
Capacitance(1) (TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VDD + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. COUT also references CI/O.
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed VDD + 0.3V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 0.3V)
NOTE:
1. At VDD < 2.0V leakages are undefined.
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +4.6
V
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-65 to +150
oC
TJN
Junction Temperature
+150
oC
IOUT
DC Output
Current
50
mA
5624 tbl 04
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 0.3V
Industrial
-40OC to +85OC0V
3.3V
+ 0.3V
5624 tbl 05
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.3
3.6
V
VSS
Ground
0
V
VIH
Input High Voltage
2.0
____
VDD+0.3(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
5624 tbl 06
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
9
pF
COUT(2)
Output Capacitance
VOUT = 0V
10
pF
5624 tbl 07
Symbol
Parameter
Test Conditions
70V35/34/25/24S
70V35/34/25/24L
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current(1)
VDD = 3.6V, VIN = 0V to VDD
___
10
___
5 A
|ILO|
Output Leakage Currentt(1)
CE = VIH, VOUT = 0V to VDD
___
10
___
5 A
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
5624 tbl 08
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70V25L25PFI8 功能描述:靜態(tài)隨機存取存儲器 8Kx16, 3.3V DUAL- PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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