參數(shù)資料
型號(hào): 6P8B
廠商: NEC Corp.
英文描述: MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION
中文描述: 馬鞍山集成電路4位單片機(jī)的紅外遙控傳輸
文件頁數(shù): 62/95頁
文件大小: 692K
代理商: 6P8B
62
μ
PD6P8, 6P8A, 6P8B
Data Sheet U17848EJ3V0DS
12.2 Program Memory Writing Procedure
The program memory is written at high speed by the following procedure.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Pull down the pins not used to GND via a resistor. Keep the CLK pin low.
Supply 3 V to the V
DD
pin. Keep the V
PP
pin low.
Supply 3 V to the V
PP
pin after waiting for 10
μ
s.
Wait for 2 ms until oscillation of the ceramic resonator connected across the X
IN
and X
OUT
pins stabilizes.
Set the program memory address 0 clear mode by using the mode setting pins.
Supply 10.5 V to V
PP
.
Set the program inhibit mode.
Input a pulse to the CLK pin four times.
Write data to the program memory in the 100
μ
s write mode.
Set the program inhibit mode.
(10) Set the verify mode. If the data have been written to the program memory, proceed to (11). If not, repeat
steps (8) through (10).
(11) Additional writing of (number of times of writing in (8) through (10): X)
×
100
μ
s.
(12) Set the program inhibit mode.
(13) Input a pulse to the CLK pin four times to update the program memory address (+1).
(14) Repeat steps (8) through (13) up to the last address.
(15) Set the 0 clear mode of the program memory address.
(16) Change the voltages on the V
PP
pin to 3 V.
(17) Turn off the power.
(8)
(9)
The following figure illustrates steps (2) through (13) above.
V
PP
V
DD
GND
V
DD
GND
CLK
V
PP
D
0
to D
7
MD
0
MD
1
MD
2
MD
3
V
DD
Repeated X time
Reset
Oscillation stabilization
wait time
Write
Verify
Additional write
Address
increment
Data input
Hi-Z
Hi-Z
Hi-Z
Data output
Data input
Hi-Z
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