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參數(shù)資料
| 型號： | 5962G9215309VMX |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 55 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 0.100 INCH PITCH, SIDE BRAZED, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 5962G9215309VMX |
5
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V±10%) (-55°C to +125°C)
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019 at 5.0E5 rads(Si).
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. VIH = 5.5V, VIL = 0V.
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VIH
High-level input voltage
(CMOS)
3.5
V
VIL
Low-level input voltage
(CMOS)
1.5
V
VOL
Low-level output voltage
IOL = 200A, VDD = 4.5V (CMOS)
0.05
V
VOH
High-level output voltage
IOH = -200A, VDD = 4.5V (CMOS)
VDD-0.05
V
VOH
High-level output voltage
IOH = -4mA, VDD = 4.5V (CMOS)
4.2
V
CIN
1
Input capacitance
= 1MHz @ 0V
4
pF
CIO
1
Bidirectional I/O capacitance
= 1MHz @ 0V
7
pF
IIN
Input leakage current
VIN = VDD and VSS
-5
5
A
IOZ
Three-state output leakage current
VO = VDD and VSS
VDD = 5.5V
G = 5.5V
-10
10
A
IOS
2, 3
Short-circuit output current
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
-90
+90
mA
IDD(OP)
Supply current operating @1MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
50
mA
IDD1(OP)
Supply current operating
@ 25MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
120
mA
IDD3(SB)
4
Supply current standby
@ 0Hz
CMOS inputs (IOUT = 0)
E1 = VDD - 0.5, VDD = 5.5V
1.2
mA
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