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參數(shù)資料
| 型號(hào)： | 5962G0151601VXA |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 OTPROM, 55 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 2.54 MM PITCH, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 5962G0151601VXA |
5
RADIATION HARDNESS
The UT28F64LV PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS 1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
tAVAV
tAVQV
t
ELQV
tGLQV
t
AVQV
t
AXQX
tEHQZ
tGHQZ
A(12:0)
CE
OE
DQ(7:0)
t
GLQX
tELQX
Total Dose
5.0E5
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2/mg
Memory Cell LET Threshold
>128
MeV-cm2/mg
Transient Upset LET Threshold
54
MeV-cm2/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg
1E-6
cm2
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