參數(shù)資料
型號(hào)： 42S16400A
廠商： Integrated Silicon Solution, Inc.
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1梅格位× 16位× 4銀行（64兆位）同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 7/55頁(yè)
文件大?。?/td> 472K
代理商： 42S16400A
IS42S16400A
ISSI
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
15
Rev.C
04/16/03
FUNCTIONAL DESCRIPTION
The 64Mb SDRAMs (1 Meg x 16 x 4 banks) are quad-bank
DRAMs which operate at 3.3V and include a synchronous
interface (all signals are registered on the positive edge of
the clock signal, CLK). Each of the 16,777,216-bit banks
is organized as 4,096 rows by 256 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0 and BA1 select the bank, A0-A11
select the row). The address bits (A0-A7) registered coincident
with the READ or WRITE command are used to select the
starting column location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information covering
device initialization, register definition, command
descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 64M SDRAM is initialized after the power is applied
to VCC and VCCQ (simultaneously) and the clock is stable.
A 100s delay is required prior to issuing any command
other than a COMMAND INHIBIT or a NOP. The COMMAND
INHIBIT or NOP may be applied during the 100us period
and continue should at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should be
applied once the 100s delay has been satisfied. All
banks must be precharged. This will leave all banks in an
idle idle state where two AUTO REFRESH cycles must be
performed. After the AUTO REFRESH cycles are complete,
the SRDRAM is then ready for mode register programming.
The mode register should be loaded prior to applying any
operational command because it will power up in an
unknown state.
相關(guān)PDF資料
PDF描述
42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
4300-000 EMI/RFI FILTER Hermetically Sealed
4300-000LF
4300-001 EMI/RFI FILTER Hermetically Sealed
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
42S16400B-6TLTR 制造商:Integrated Silicon Solution Inc 功能描述:
42S16800A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S16800L 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A60 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A70 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
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