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參數資料
| 型號： | 42S16400A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數： | 25/55頁 |
| 文件大小： | 472K |
| 代理商： | 42S16400A |
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IS42S16400A
ISSI
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
31
Rev.C
04/16/03
CLK
CKE
HIGH - Z
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9,A11
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP
ACTIVE
≥ tCKS
tCKS
All banks idle
Enter power-down mode
Exit power-down mode
tRCD
tRAS
tRC
Input buffers gated off
PRECHARGE Command
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses are
in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if
power-down occurs when there is a row active in either
bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output
buffers, excluding CKE, for maximum power savings
while in standby. The device may not remain in the power-
down state longer than the refresh period (64ms) since no
refresh operations are performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting tCKS). See figure below.
PRECHARGE
The PRECHARGE command (see figure) is used to
deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row access some specified time (tRP) after
the PRECHARGE command is issued. Input A10 deter-
mines whether one or all banks are to be precharged, and
in the case where only one bank is to be precharged,
inputs BA0, BA1 select the bank. When all banks are to be
precharged, inputs BA0, BA1 are treated as “Don’t Care.”
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE com-
mands being issued to that bank.
相關PDF資料 |
PDF描述 |
|---|---|
| 42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 42S16400B-6TLTR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| 42S16800A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S16800L | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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