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參數(shù)資料
| 型號： | 42S16400A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 14/55頁 |
| 文件大?。?/td> | 472K |
| 代理商： | 42S16400A |
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IS42S16400A
ISSI
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
21
Rev.C
04/16/03
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ
NOP
CAS Latency - 3
tAC
tOH
DOUT
T0
T1
T2
T3
T4
tLZ
CLK
COMMAND
DQ
READ
NOP
CAS Latency - 2
tAC
tOH
DOUT
T0
T1
T2
T3
tLZ
CAS Latency
same bank. The PRECHARGE command should be issued
x cycles before the clock edge at which the last desired
data element is valid, where
x equals the CAS latency
minus one. This is shown in the READ to PRECHARGE
diagram for each possible CAS latency; data element
n +
3 is either the last of a burst of four or the last desired of a
longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until tRP is met. Note that part of the row precharge time is
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The
BURST TERMINATE command should be issued
x cycles
before the clock edge at which the last desired data
element is valid, where
x equals the CAS latency minus
one. This is shown in the READ Burst Termination
diagram for each possible CAS latency; data element
n +
3 is the last desired data element of a longer burst.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 42S16400B-6TLTR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| 42S16800A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S16800L | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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