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參數(shù)資料
| 型號： | 3SK317 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 中文描述： | 硅N溝道雙柵MOS場效應(yīng)超高頻/甚高頻射頻放大器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 3SK317 |
3SK317
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
14
V
Gate1 to source voltage
±
8
±
8
V
Gate2 to source voltage
V
Drain current
25
mA
Channel power dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
14
—
—
V
I
D
= 200
μ
A
V
G1S
= V
G2S
= -3 V
I
G1
=
±
10
μ
A
V
G2S
= V
DS
= 0
I
G2
=
±
10
μ
A
V
G1S
= V
DS
= 0
V
G1S
=
±
6 V
V
G2S
= V
DS
= 0
V
G2S
=
±
6 V
V
G1S
= V
DS
= 0
V
DS
= 10 V, V
G2S
= 3 V
I
D
= 100
μ
A
V
DS
= 10 V, V
G1S
= 3 V
I
D
= 100
μ
A
V
DS
= 6 V, V
G1S
= 0.75 V
V
G2S
= 3 V
V
DS
= 6 V, V
= 3 V
I
D
= 10 mA , f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V
I
D
= 10 mA , f = 1 MHz
Gate1 to source breakdown
voltage
V
(BR)G1SS
±
8
—
—
V
Gate2 to source breakdown
voltage
V
(BR)G2SS
±
8
—
—
V
Gate1 to source cutoff current
I
G1SS
—
—
±
100
nA
Gate2 to source cutoff current
I
G2SS
—
—
±
100
nA
Gate1 to source cutoff voltage
V
G1S(off)
0
0.2
1
V
Gate2 to source cutoff voltage
V
G2S(off)
0
0.3
1
V
Drain current
I
DS(op)
4
8
14
mA
Forward transfer admittance
|y
fs
|
20
25
—
mS
Input capacitance
C
iss
C
oss
C
rss
PG
2.4
3.1
3.5
pF
Output capacitance
0.8
1.1
1.4
pF
Reverse transfer capacitance
—
0.021
0.04
pF
Power gain
24
27.6
—
dB
V
DS
= 6 V, V
G2S
= 3 V
I
D
= 10 mA , f = 200 MHz
V
DS
= 6 V, V
G2S
= 3 V
I
D
= 10 mA , f = 900 MHz
V
DS
= 6 V, V
= 3 V
I
D
= 10 mA , f = 60 MHz
Noise figure
NF
—
1.0
1.5
dB
Power gain
PG
12
15.6
—
dB
Noise figure
NF
—
3
4
dB
Noise figure
NF
—
2.7
3.5
dB
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PDF描述 |
|---|---|
| 3SK318 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK317ZR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 3SK317ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 3SK318YB-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
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