參數(shù)資料
型號: 3SK224
廠商: NEC Corp.
英文描述: N-Channel Silicon Dual-Gate MOSFET(應用于RF放大器的N溝道雙門MOSFET)
中文描述: N溝道硅雙柵MOSFET(應用于射頻放大器的? MOSFET的溝道雙門)
文件頁數(shù): 3/6頁
文件大小: 47K
代理商: 3SK224
3SK224
3
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
T
A
– Ambient Temperature – °C
50
75
100
125
P
T
0
0
0.5
1.0
1.5
2.0
V
G1S
– Gate1 to Source Voltage – V
I
D
25
20
15
10
5
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 6 V
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
2.5 V
0
0
0.5
1.0
1.5
2.0
V
G1S
– Gate1 to Source Voltage – V
|
f
|
40
32
24
16
8
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 6 V
f = 1 kHz
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
0
3
6
9
12
15
V
DS
– Drain to Source Voltage – V
I
D
25
20
15
10
5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
G2S
= 3 V
1.2 V
0.8 V
0.6 V
0.4 V
0.2 V
V
G1S
= 1.4 V
1.0 V
0
4
8
12
16
20
I
D
– Drain Current – mA
|
f
|
40
32
24
16
8
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 6 V
f = 1 kHz
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
2.5 V
2.0 V
2.5 V
0
0
1.0
2.0
3.0
4.0
V
G2S
– Gate2 to Source Voltage – V
C
i
5.0
4.0
3.0
2.0
1.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
= 10 mA
(at V
DS
= 6 V
V
= 3 V)
f = 1 MHz
相關(guān)PDF資料
PDF描述
3SK225 N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF, UHF RF AMPLIFIER APPLIATIONS)
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3SK230 N-Channel Silicon Dual-Gate MOSFET(應用于RF放大器的N溝道雙門MOSFET)
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參數(shù)描述
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