參數(shù)資料
型號(hào)： 3N165-6
廠商： Linear Integrated Systems
英文描述： MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 整體式雙P溝道增強(qiáng)型MOS管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 26K
代理商： 3N165-6
Monoithc Dual P-Channel
Enhancement Mode MOSFET
General Purpose Ampifier
3N165 /3N166
FEATURES
Very High Impedance
High Gate Breakdown
Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3). . . . . . . . . . . . .
±
125
Gate-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
80V
Drain Current (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N165-66
X3N165-66
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
G1
D2
D1
G2
C
TO-99
S
2506
PIN CONFIGURATION
DEVICE SCHEMATIC
5
1
3
4
8
7
0190
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
I
GSSR
Gate Reverse Leakage Current
10
pA
V
GS
= 40V
I
GSSF
Gate Forward Leakage Current
-10
V
GS
= -40V
-25
T
A
= +125
o
C
I
DSS
Drain to Source Leakage Current
-200
V
DS
= -20V
I
SDS
Source to Drain Leakage Current
-400
V
SD
= -20V, V
DB
= 0
I
D(on)
On Drain Current
-5
-30
mA
V
DS
= -15V, V
GS
= -10V
V
GS(th)
Gate Source Threshold Voltage
-2
-5
V
V
DS
= -15V, I
D
= -10
μ
A
V
GS(th)
Gate Source Threshold Voltage
-2
-5
V
DS
= V
GS
, I
D
= -10
μ
A
r
DS(on)
Drain Source ON Resistance
300
ohms
V
GS
= -20V, I
D
= -100
μ
A
BOTTOM VIEW
S
C
0180
D
2
G
2
G
1
D
1
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