參數(shù)資料
型號(hào)： 3N172-73
廠商： CALOGIC LLC
英文描述： Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
中文描述： 二極管保護(hù)P溝道增強(qiáng)型MOS管通用放大器/開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 33K
代理商： 3N172-73
Diode ProtectedP-Channel
Enhancement Mode MOSFET
General Purpose Ampifier/Swtch
3N172 /3N173
FEATURES
High Input Impedance
Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
μ
A
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N172-73
X3N172-73
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
TO-72
G
D
S
C,B
1503Z
DEVICE SCHEMATIC
1
2
0200
3
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN
MAX
-200
MIN
MAX
-500
I
GSS
Gate Reverse Current
pA
V
GS
= -20V
-0.5
-1.0
μ
A
T
A
= +125
o
C
BV
GSS
Gate Breakdown Voltage
-40
-125
-30
-125
V
I
D
= -10
μ
A
I
D
= -10
μ
A
I
S
= -10
μ
A, V
DB
= 0
V
DS
= V
GS
, I
D
= -10
μ
A
V
DS
= -15V, I
D
= -10
μ
A
V
DS
= -15V, I
D
= -500
μ
A
BV
DSS
Drain-Source Breakdown Voltage
-40
-30
BV
SDS
Source-Drain Breakdown Voltage
-40
-30
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
-2.0
-5.0
-2.0
-5.0
V
GS
Gate Source Voltage
-3.0
-6.5
-2.5
-6.5
I
DSS
Zero Gate Voltage Drain Current
-0.4
-10
nA
V
DS
= -15V, V
GS
= 0
I
SDS
Zero Gate Voltage Source Current
-0.4
-10
V
SD
= -15V, V
DB
= 0, V
GD
= 0
V
GS
= -20V, I
D
= -100
μ
A
r
DS(on)
Drain Source On Resistance
250
350
ohms
I
D(on)
On Drain Current
-5.0
-30
-5.0
-30
mA
V
DS
= -15V, V
GS
= -10V
相關(guān)PDF資料
PDF描述
3N173 Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N187 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
3N253 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
3N254 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
3N255 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
3N173 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:N-CHANNEL JFET
3N187 制造商:Microsemi Corporation 功能描述:SILICON DUAL INSULATED GATE MOSFET TRANSISTOR - Rail/Tube 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:N/A 功能描述:3N187 DUAL GATE MOSFET '90 制造商:Harris Corporation 功能描述:
3N188 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:DUAL P CHANNEL ENHANCEMENT MODE MOSFET
3N189 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:DUAL P CHANNEL ENHANCEMENT MODE MOSFET
3N190 制造商:LINEAR 制造商全稱(chēng):LINEAR 功能描述:P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*