參數(shù)資料
型號(hào): 3256E
廠商: Lattice Semiconductor Corporation
英文描述: In-System Programmable High Density PLD
中文描述: 在系統(tǒng)可編程高密度可編程邏輯器件
文件頁數(shù): 5/15頁
文件大?。?/td> 159K
代理商: 3256E
Specifications
ispLSI 3256E
5
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
Table 2-0003/3256E
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
3ns 10% to 90%
1.5V
1.5V
See Figure 2
Output Load conditions (See Figure 2)
TEST CONDITION
R1
470
R2
390
390
390
CL
35pF
35pF
35pF
A
B
470
Active High
Active Low
Active High to Z
at
V
OH
C
470
390
5pF
390
5pF
Active Low to Z
at
V
OL
Table 2 - 0004A
Figure 2. Test Load
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A
DC Electrical Characteristics
Over Recommended Operating Conditions
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using sixteen 16-bit counters.
3. Typical values are at V
CC
= 5V and T
A
= 25
°
C.
4. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum I
CC
.
1
I
IH
I
IL-isp
I
IL-PU
I
OS
I
CC
PARAMETER
2,4
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
Bscan/ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
V
V (Max.)
IN
3.5V
V
V
0V
V
V
0V
V
V
V = 5V, V = 0.5V
V = 0.0V, V = 3.0V
f = 1 MHz
IN
CC
IN
IL
IN
IL
CONDITION
MIN.
2.4
TYP.
MAX.
0.4
-10
UNITS
V
V
μ
A
3
300
10
-150
-150
-200
μ
A
μ
A
μ
A
mA
mA
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