參數資料
型號: 2SK4201-S19-AY
元件分類: JFETs
英文描述: 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220, 3 PIN
文件頁數: 4/8頁
文件大小: 184K
代理商: 2SK4201-S19-AY
Data Sheet D19504EJ1V0DS
4
2SK4201
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Cu
rrent
-
A
0
50
100
150
200
250
05
10
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
I
D
-Drain
Current
-
A
0.1
1
10
100
1000
0
123
45
6
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(of
f)
-G
ate
to
S
ource
Cut
-off
V
ol
tage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Fo
rw
ar
dT
ransfer
A
d
mittance
-
S
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
4
8
12
16
20
24
1
10
100
1000
VGS = 10 V
Pulsed
ID - Drain Current - A
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
4
8
12
16
20
24
0
5
10
15
20
ID = 40 A
Pulsed
VGS - Gate to Source Voltage - V
相關PDF資料
PDF描述
2SK4206GT SMALL SIGNAL, FET
2SK4206U 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK4209 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4209 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4227JS POWER, FET, TO-220AB
相關代理商/技術參數
參數描述
2SK4203LS 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4204LS 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4207 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Swiching Regulator Applications
2SK4207(Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR
2SK4209 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件