參數(shù)資料
型號(hào)： 2SK4201-S19-AY
元件分類： JFETs
英文描述： 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： LEAD FREE, TO-220, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 184K
代理商： 2SK4201-S19-AY
Data Sheet D19504EJ1V0DS
2
2SK4201
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 40 A
26
52
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 40 A
9.1
13
m
Ω
Input Capacitance
Ciss
VDS = 10 V,
4700
pF
Output Capacitance
Coss
VGS = 0 V,
760
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
250
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 40 A,
24
ns
Rise Time
tr
VGS = 10 V,
12
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
77
ns
Fall Time
tf
11
ns
Total Gate Charge
QG
VDD = 80 V,
82
nC
Gate to Source Charge
QGS
VGS = 10 V,
19
nC
Gate to Drain Charge
QGD
ID = 80 A
27
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 80 A, VGS = 0 V
0.95
1.5
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
73
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
205
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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