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參數(shù)資料
| 型號： | 2SK4090(1)-S27-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, MP-3B, TO-251, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 286K |
| 代理商： | 2SK4090(1)-S27-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4090
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18634EJ1V0DS00 (1st edition)
Date Published February 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 6.0 m
Ω MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 11 m
Ω MAX. (VGS = 4.5 V, ID = 30 A)
Low gate to drain charge
QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4090(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4090-ZK-E1-AY
Note
2SK4090-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±192
A
Total Power Dissipation (TC = 25
°C)
PT1
36
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
35
A
Single Avalanche Energy
Note2
EAS
122.5
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251)
(TO-252)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4090-ZK-E1-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4090-ZK-E2-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4091-ZK-E1-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4091-ZK-E2-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4092 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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