參數(shù)資料
型號: 2SK4143-S17-AY
元件分類: JFETs
英文描述: 20 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 192K
代理商: 2SK4143-S17-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4143
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18772EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 44 m
Ω MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m
Ω MAX. (VGS = 4.0 V, ID = 10 A)
Low input capacitance
Ciss = 820 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4143-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 typ. 2.2 g
Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±20
A
Drain Current (pulse)
Note1
ID(pulse)
±50
A
Total Power Dissipation (TC = 25
°C)
PT1
20
W
Total Power Dissipation (TA = 25
°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
22.5
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Tch
≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
6.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
62.5
°C/W
(Isolated TO-220)
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