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參數(shù)資料
| 型號(hào)： | 2SK4143-S17-AY |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 192K |
| 代理商： | 2SK4143-S17-AY |
Data Sheet D18772EJ1V0DS
2
2SK4143
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 10 A
5
10
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 10 A
37
44
m
Ω
RDS(on)2
VGS = 4.0 V, ID = 10 A
44
78
m
Ω
Input Capacitance
Ciss
VDS = 10 V,
820
pF
Output Capacitance
Coss
VGS = 0 V,
150
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
62
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 10 A,
8.6
ns
Rise Time
tr
VGS = 10 V,
8.6
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
38
ns
Fall Time
tf
7.1
ns
Total Gate Charge
QG
VDD = 48 V,
18
nC
Gate to Source Charge
QGS
VGS = 10 V,
2.4
nC
Gate to Drain Charge
QGD
ID = 20 A
4.8
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 20 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V,
39
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
50
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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