參數(shù)資料
型號(hào): 2SK4081-S27-AY
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOS FET
中文描述: 開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 231K
代理商: 2SK4081-S27-AY
Data Sheet D18785EJ2V0DS
2
2SK4081
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.0
3.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
0.35
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 1.0 A
4.2
5
Ω
Input Capacitance
C
iss
V
DS
= 10 V,
230
pF
Output Capacitance
C
oss
V
GS
= 0 V,
95
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
11
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 1.0 A,
11
ns
Rise Time
t
r
V
GS
= 10 V,
7
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
13
ns
Fall Time
t
f
13.5
ns
Total Gate Charge
Q
G
7.2
nC
Gate to Source Charge
Q
GS
2.9
nC
Gate to Drain Charge
Q
GD
V
DD
= 450 V,
V
GS
= 10 V,
I
D
= 2.0 A
3.0
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0 V
0.87
1.5
V
Reverse Recovery Time
t
rr
I
F
= 2.0 A, V
GS
= 0 V,
175
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
550
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
Ω
50
Ω
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1%
τ
PG.
50
Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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