參數(shù)資料
型號(hào): 2SK4082-S17-AY
廠(chǎng)商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOS FET
中文描述: 開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 186K
代理商: 2SK4082-S17-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 2.2
Ω
MAX. (V
GS
= 10 V, I
D
= 1.8
A)
Low gate charge
Q
G
= 13 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 3.5 A)
Gate voltage rating:
±
30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4082-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
±
3.5
±
14
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
P
T1
35
W
P
T2
2.0
W
Channel Temperature
T
ch
150
°
C
°
C
A
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
150
2
I
AS
E
AS
240
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25
°
C, V
DD
= 150 V, R
G
= 25
Ω
,
V
GS
= 20
0 V
2007
(Isolated TO-220)
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