參數(shù)資料
型號(hào)： 2SK4092-A
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOS FET
中文描述： 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/8頁
文件大小： 196K
代理商： 2SK4092-A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18776EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 0.4
Ω
MAX. (V
GS
= 10 V, I
D
= 10
A)
Low gate charge
Q
G
= 50 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 21 A)
Gate voltage rating:
±
30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4092-A
Note
Sn-Ag-Cu
100 p/package
TO-3P (MP-88) typ. 5.0 g
Note
Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
±
21
±
60
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
P
T1
200
W
P
T2
3
W
Channel Temperature
T
ch
150
°
C
°
C
A
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
150
21
I
AS
E
AS
29.4
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25
°
C, V
DD
= 150 V, R
G
= 25
Ω
,
V
GS
= 20
→
0 V
(TO-3P)
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