- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄50005 > 2SK4073LS 90 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK4073LS |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK4073LS |
Data Sheet D14757EJ2V0DS
2
2SK3455
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 6.0 A
2.0
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 6.0 A
0.50
0.60
Ω
Input Capacitance
Ciss
VDS = 10 V
1620
pF
Output Capacitance
Coss
VGS = 0 V
250
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
10
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 6.0 A
24
ns
Rise Time
tr
VGS = 10 V
18
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
50
ns
Fall Time
tf
15
ns
Total Gate Charge
QG
VDD = 400 V
30
nC
Gate to Source Charge
QGS
VGS = 10 V
9
nC
Gate to Drain Charge
QGD
ID = 12 A
11
nC
Body Diode Forward Voltage
VF(S-D)
IF = 12 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 12 A, VGS = 0 V
1.5
μs
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
11
μC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
VGS
ID
ton
toff
td(on)
tr
td(off)
tf
10%
μ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK4075-ZK-E1-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4075-ZK-E2-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4075-ZK-E2-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4081(1)-S27-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK4081-ZK-E2-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4074LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075-ZK-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。