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參數(shù)資料
| 型號(hào)： | 2SK4073LS |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK4073LS |
2SK4073LS
No. A0500-1/5
Features
Ultralow ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
90
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
360
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
850
mJ
Avalanche Current *2
IAV
70
A
Note : *1 VDD=30V, L=200H, IAV=70A
*2 L
≤200H, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=45A
44
74
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=45A, VGS=10V
3.8
5.0
m
RDS(on)2
ID=45A, VGS=4V
5.0
7.0
m
Marking : K4073
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0500
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
N0106QA SY IM TC-00000261
SANYO Semiconductors
DATA SHEET
2SK4073LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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PDF描述 |
|---|---|
| 2SK4075-ZK-E1-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4075-ZK-E2-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4075-ZK-E2-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4081(1)-S27-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK4081-ZK-E2-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4074LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075-ZK-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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