- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50005 > 2SK4075-ZK-E2-AY 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK4075-ZK-E2-AY |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | 2SK4075-ZK-E2-AY |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4075
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
Pure Sn (Tin)
Tape
2500 p/reel
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
Low on-state resistance
RDS(on)1 = 6.7 m
Ω MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 m
Ω MAX. (VGS = 4.5 V, I= 15 A)
Low Ciss: Ciss = 2900 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±60
A
Drain Current (pulse)
Note1
ID(pulse)
±180
A
Total Power Dissipation (TC = 25°C)
PT1
52
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
28
A
Single Avalanche Energy
Note2
EAS
78
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
2.4
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK4075-ZK-E2-AY | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4081(1)-S27-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK4081-ZK-E2-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 2SK4081-ZK-E1-AY | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 2SK4083G | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4078 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078B-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078-ZK-E1-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。