參數(shù)資料
型號(hào): 2SK4016
元件分類: JFETs
英文描述: 13 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 211K
代理商: 2SK4016
2SK4016
2005-05-30
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π
MOS VI)
2SK4016
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: |Yfs| = 10 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
13
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
52
A
Drain power dissipation (Tc
= 25°C)
PD
50
W
Single-pulse avalanche energy
(Note 2)
EAS
1033
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
5.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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