參數(shù)資料
型號(hào): 2SK4021
元件分類(lèi): JFETs
英文描述: 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J2B, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 231K
代理商: 2SK4021
2SK4021
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS V)
2SK4021
Switching Regulators and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 250 V)
Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 kΩ)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
4.5
A
Drain current
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
51
mJ
Avalanche current
IAR
4.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
2.3
1.1
± 0.2
0.9
0.6
± 0.15
5.2
± 0.2
2.3
0.6 MAX.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.
5
±
0.2
2.3
±
0.
2
0.6
± 0.15
5.
7
1.
6
4.1
±
0.
2
0.8 MAX.
1.1 MAX.
3
2
1
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
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